SI1413EDH MOSFET P-Channel -20V -2.9A 0.095ohm SOT-363 marking BAD power MOSFET 3000VESD protection|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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SI1413EDH MOSFET P-Channel -20V -2.9A 0.095ohm SOT-363 marking BAD power MOSFET 3000VESD protection

Model：SI1413EDH
Mark / screen / code / typing：BAD
Manufacturer：
Date Code：05+ 05+
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	-2.9A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.095Ω @-2.9A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45V
耗散功率Pd Power Dissipation	1.56W
Description & Applications	TrenchFET Power MOSFETS: 1.8-V Rated ESD Protected: 3000 V Thermally Enhanced SC-70 Package
描述与应用	功率MOSFET：1.8 V额定 ESD保护：3000 V 耐热增强型SC-70封装

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