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SI1413EDH MOSFET P-Channel -20V -2.9A 0.095ohm SOT-363 marking BAD power MOSFET 3000VESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -2.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.095Ω @-2.9A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 1.56W |
| Description & Applications | TrenchFET Power MOSFETS: 1.8-V Rated ESD Protected: 3000 V Thermally Enhanced SC-70 Package |
| 描述与应用 | 功率MOSFET：1.8 V额定 ESD保护：3000 V 耐热增强型SC-70封装 |
