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SI1917EDH Dual P-Channel 12-V (D-S) MOSFET -12V -1.15A SOT363 MARKING DBW
| Drain-Source Voltage (Vds) | -12V |
|
Vgs(±) Gate-Source Voltage |
±12V |
| Drain Current （Id） | -1.15A |
|
Rds(on) Drain-Source On-State Resistance |
VGS = –1.8 V, ID = –0.2 A RDS=0.066~0.8Ω |
|
Vgs(th) Gate-Source Threshold Voltage |
-0.45V |
| Power Dissipation (Pd) | 0.73W |
| Description & Applications | Dual P-Channel 12-V (D-S) MOSFET
TrenchFET Power MOSFETS: 1.8-V Rated
ESD Protected: 3000 V
Load Switching
PA Switch
Level Switch
|
| Technical Documentation Download | Read Online |
