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1SS417CT SBD Schottky Barrier Diodes 40V 100mA/0.1A 560mV/0.56V SOD-923/CST2 marking X low forward voltage fast switch

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Product description
反向电压Vr
Reverse Voltage		 40V
平均整流电流Io
AVerage Rectified Current		 100mA/0.1A
最大正向压降VF
Forward Voltage(Vf)		 560mV/0.56V
最大耗散功率Pd
Power dissipation		 100MW/0.1W
Description & Applications TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type. High Speed Switching Application. Small package. Low forward voltage: VF (3) = 0.56 V (typ.). Low reverse current: IR = 5 μA (max).
描述与应用 东芝二极管硅外延肖特基类型。 高速开关应用。 小包装。 低正向电压VF（3）=0.56 V（典型值）。 低反向电流：IR= 5μA（最大值）。
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