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2SJ668 MOSFET P-Channel Vds= -60V Id=-5A Rds=0.16~0.25ohm SOT-252 marking J668

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
±20V
最大漏极电流Id
Drain Current
-5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.16Ω~0.25Ω @VGS=−4V, ID=−2.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
Vth =−0.8 to −2.0 V (VDS=−10 V,ID =−1 mA)
耗散功率Pd
Power Dissipation
20W
Description & Applications TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII). Relay Drive, DC/DC Converter and Motor Drive. Applications. *4 V gate drive. * Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.). * High forward transfer admittance: |Yfs| = 5.0 S (typ.). * Low leakage current: IDSS = −100 μA (max) (VDS = −60 V). * Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA).
描述与应用 东芝场效应晶体管的硅P沟道MOS型(U-MOSIII)。 继电器驱动器,DC/ DC转换器和马达驱动电路。 应用程序。 * 4 V栅极驱动。 *低漏源导通电阻RDS(ON)= 0.12Ω(典型值)。 *较强的正向转移导纳:YFS|=5.0 S(典型值)。 *低漏电流IDSS=-100μA(最大值)(VDS=60V)。 *增强模式:VTH= -0.8到-2.0 V(VDS=-10 V,ID=-1毫安)。
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