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TTA003 PNP -80V -3A 100MHZ HEF=60~200 TO252 MARKING A003
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-80v |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-80V |
| 集电极连续输出电流IC Collector Current(IC) |
-3A |
| 截止频率fT Transtion Frequency(fT) |
100MHZ |
| 直流电流增益hFE DC Current Gain(hFE) |
60~200 |
| 管压降VCE(sat) Collector-Emitter SaturationVoltage |
-0.3V~-0.5V |
| 耗散功率Pc PoWer Dissipation |
10W |
| Description & Applications | Bipolar Transistors Silicon PNP Epitaxial Type. * Power Amplifiers * Power Switching (1) Low collector saturation voltage: VCE(sat)= -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) |
| 描述与应用 | 双极晶体管PNP硅外延型。 *功率放大器 *电源开关 (1)低集电极饱和电压VCE(sat)=-0.5 V(最大值)(IC= -1 A,IB=-100毫安) (2)高速开关:TSTG=300纳秒(典型值) |
