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TJ15P04M3 P MOSFET -40V -15A TO252 MARKING TJ15P04M3

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Product description
Drain-Source Voltage （Vds）  -40V

Vgs (±)

Gate-Source Voltage 

  ±20V
 
Drain Current （Id）  -15A
Drain-Source On-State （Rds）  RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
 
Gate-Source Threshold Voltage （th）    -0.8~-2.0V
Power dissipation （Pd）  29W
Description & Applications  MOSFETs Silicon P-Channel MOS (U-MOS)
 
• DC-DC Converters
• Desktop Computers
 
(1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
 
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