My order
Share to:  
Location:Home > Stock Inventory > Product Details

TPCF8002 N Channel MOS 30V 7A SOT23-8 MARKING F2B Low drain-source ON resistance Low leakage current

Hot selling goods

Product description
最大源漏极电压Vds Drain-Source Voltage 30V
最大栅源极电压Vgs(±) Gate-Source Voltage ±20V
最大漏极电流Id Drain Current 7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 16mΩ~21mΩ
开启电压Vgs(th) Gate-Source Threshold Voltage 1.3V~2.5V VDS = 10 V, ID = 1mA
耗散功率Pd Power Dissipation 2.5W
Description & Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ) . * Notebook PC Applications * Portable Equipment Applications * Small footprint due to a small and thin package * Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) * Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) * Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
描述与应用 东芝场效应晶体管的硅N沟道MOS型(U-MOSⅣ)。 *笔记本电脑应用 *便携式设备的应用 *由于占地面积小,小而薄的封装 *低漏源导通电阻RDS(ON)= 16mΩ(典型值) *低漏电流IDSS= 10μA(最大)(VDS=30 V) *增强模式:VTH =1.3到2.5 V(VDS=10V,ID=1毫安)
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00