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SI5515CDC N- and P-Channel 20 V MOSFET MARKING EHU
| 最大源漏极电压Vds Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
8V/8V |
| 最大漏极电流Id Drain Current |
10A/-10A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
50mΩ@ VGS =1.8V, ID =5.1A/156mΩ@ VGS =-1.8V, ID =-2.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
0.4~0.8V/-0.4~-0.8V |
| 耗散功率Pd Power Dissipation |
3.1W |
| Description & Applications | N- and P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench FET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices |
| 描述与应用 | N沟道和P沟道20 V（D-S）的MOSFET 特点 •无卤素根据IEC 61249-2-21定义 •沟槽FET功率MOSFET •100％的Rg测试 •符合RoHS指令2002/95/EC 应用 •用于便携式设备的负载开关 |
