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MMBTH11 NPN 30V 50MA 650MHZ MARKING 3G SOT23

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
650Mhz
直流电流增益hFE
DC Current Gain(hFE)
60
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
350mW/0.35W
Description & Applications NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
描述与应用 NPN RF晶体管 该设备是专为共发射极低噪声放大器 和混频器的应用程序与集电极电流在100μA 10 mA范围300 MHz和低频漂移共基 VHF振荡器的应用程序用于驱动具有高输出电平 FET混频器。
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