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LBSS84LT1G P MOSFET -50V -0.13A SOT23 MARKING PD
| 最大源漏极电压Vds Drain-Source Voltage |
-50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
12V |
| 最大漏极电流Id Drain Current |
-0.13A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
5.0Ω @100mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-0.8--2.0V |
| 耗散功率Pd Power Dissipation |
225mW/0.225W |
| Description & Applications | Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 Energy Efficient Miniature SOT–23 Surface Mount Package Saves Board Space |
| 描述与应用 | 功率MOSFET 130毫安，50伏 P沟道SOT-23 高效节能 微型SOT-23表面贴装封装节省电路板空间 |
