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RT2C00M COMPOSITE TRANSISTOR NPN+NPN 50V 0.2A 200MHZ HEF=150~300 SOT353 MARKING LE

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  0.2A
Transtion Frequency(fT)  200MHZ
DC Current Gain(hFE)  150~300

VCE (sat)

Collector-Emitter Saturation Voltage

 0.3V
Power Dissipation (Pd)  0.15W
Description & Applications  COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
 
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