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STB1188LDM PNP -40V -2A 150MHZ SOT223 MARKING ZBLY
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−32V |
| 集电极连续输出电流IC Collector Current(IC) |
-2A |
| 截止频率fT Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
|
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−800mV/-0.8V |
| 耗散功率Pc PoWer Dissipation |
500mW/0.5W |
| Description & Applications | PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W • Low collector saturation voltage • Complementary pair with STD1766 |
| 描述与应用 | PNP硅晶体管 描述 •中等功率放大器 特点 •PC（集电极耗散）= 2W •低集电极饱和电压 •互补配对STD1766 |
