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CES2324 N-Channel Enhancement Mode Field Effect Transistor 20V 4.2A SOT23 MARKING 248R

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Product description
Drain-Source Voltage （Vds）  20V

Vgs(±)

Gate-Source Voltage

  12V
Drain Current （Id）  4.2A
Drain-Source On-State （Rds）  RDS(ON)= 45mΩ @VGS = 4.5V.
 RDS(ON)= 80mΩ @VGS = 2.5V.

Vgs （th）

Gate-Source Threshold Voltage

  0.5V~1.5V
Power dissipation （Pd）  1.25W
Description & Applications  N-Channel Enhancement Mode Field Effect Transistor
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
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