MA4E1339E1-1068T RF & Microwave Medium Barrier Silicon 20 V Schottky Diode 30MA VF=0.41V SOT143 MARKING 7G|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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MA4E1339E1-1068T RF & Microwave Medium Barrier Silicon 20 V Schottky Diode 30MA VF=0.41V SOT143 MARKING 7G

Model：MA4E1339E1-1068T
Mark / screen / code / typing：7G
Manufacturer：
Date Code： 10+ROHS
Package：SOT-143/SOT23-4
Standard Package：3000
Min Order：1

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Product description

Reverse Voltage(Vr)	20V
Average Rectified Current(Io)	30MA
Forward Voltage(Vf)	410MV/0.41V
Junction capacitance(Cj)	1.2PF
Power Dissipation （Pd）	250MW
Description & Applications	Silicon Medium Barrier Schottky Diodes • RF & Microwave Medium Barrier Silicon 20 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages

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