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DMN66D0LDW-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT 60V 115MA SOT-363/SC70-6 MARKING MN1ZN
| Drain-Source Voltage (Vds) | 60V |
|
Vgs(±) Gate-Source Voltage |
20V |
| Drain Current （Id） | 115MA |
|
Rds(on) Drain-Source On-State Resistance |
VGS = 5.0V, ID = 0.115A 6Ω |
|
Vgs(th) Gate-Source Threshold Voltage |
2V |
| Power Dissipation (Pd) | 250MW |
| Description & Applications | • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
| Technical Documentation Download | Read Online |
