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HB6P0130FE MOSFET Dual P-ch 30V 100mA SOT-563F

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Product description
Drain-Source Voltage -30V
Gate-Source Voltage 20V
Drain Current -100mA/-0.1A
Drain-Source On-State Resistance 12Ω@ VGS = -4V, ID = -10mA
Gate-Source Threshold Voltage -1.1~-1.7V
Power Dissipation 150mW/0.15W
Description & Applications Field Effect Transistor Silicon P Channel MOS Type ●High Speed Switching Applications ●Analog Switch Applications ● Small package ● Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
   
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