集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
截止频率fT
Transtion Frequency(fT) |
250MHz |
直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
150mV/0.15V |
耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features • NPN SILICON EPITAXIAL TRANSISTOR • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V |
| 描述与应用 |
特点 •NPN硅外延晶体管 •高直流电流增益：HFE2=200 TYP。 •高电压：VCEO= 50 V |