最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 7V |
最大漏极电流Id
Drain Current | -100mA/-0.1A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 15Ω @-10mA,-4V |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.5--1.5 |
耗散功率Pd
Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon P-channel MOSFET For switching circuits ■ Features • Ultra small package switching MOSFETs • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. |
| 描述与应用 | 硅P沟道MOSFET 用于开关电路 ■特性 •超小型封装开关MOSFET •SSS迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |