集电极-基极反向击穿电压V(BR)CBO 
            Collector-Base Voltage(VCBO) | 
            -50V | 
        
        
            集电极-发射极反向击穿电压V(BR)CEO 
            Collector-Emitter Voltage(VCEO) | 
            −45V | 
        
        
            集电极连续输出电流IC 
            Collector Current(IC) | 
            −500mA/-0.5A | 
        
        
            截止频率fT 
            Transtion Frequency(fT) | 
            80MHz | 
        
        
            直流电流增益hFE 
            DC Current Gain(hFE) | 
            100~250 | 
        
        
            管压降VCE(sat) 
            Collector-Emitter SaturationVoltage | 
            −700mV/-0.7V | 
        
        
            耗散功率Pc 
            PoWer Dissipation | 
            250mW/0.25W | 
        
        
            | Description & Applications | 
            PNP general purpose transistor                                                                                                                            FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification | 
        
        
            | 描述与应用 | 
            PNP通用晶体管                                                                                                                                                    特点 •高电流(最大500毫安) •低电压(最大45 V)。 应用 •通用开关和放大 |