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  • Model：BF1108
  • Manufacturer：HUABAN
  • Date Code：08ROHS 08+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：NGW
  • Package：SOT-143

最大源漏极电压Vds Drain-Source Voltage3V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current10mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance20Ω@ VGS = -0V,ID = -1mA
开启电压Vgs（th） Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation
Description & ApplicationsGeneral description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Features Specially designed for low loss RF switching up to 1 GHz Applications Various RF switching applications such as:Passive loop through for VCR tuner、Transceiver switching
描述与应用一般说明 这些开关是耗尽型场效应晶体管（FET）和一个带开关二极管SOT143B（BF1108）或SOT143R（BF1108R）包的组合。低损耗和高隔离这些设备的能力，提供优异的射频切换功能。从地面二极管可以隔离MOSFET栅极，导致低的损失。集成二极管之间的栅极和源极，栅极和漏极之间，防止过高的输入电压浪涌。 特点 专为低损失高达1 GHz RF开关 应用 各种射频开关应用，如：无源环通VCR调谐器，收发器开关

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BF1108
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