集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | -2A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300~800 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −450mV/-0.45V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics * Low Saturation Voltages |
| 描述与应用 | PNP硅POWER（开关）晶体管 特点 *2W功耗 *6A峰值脉冲电流 *优秀HFE特性 *低饱和电压 |