| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC Collector Current(IC) |
600mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
820~27000 |
| 截止频率fT Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features •Dual digital transistors •Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. •These transistors can be used at high current levels, IC=600mA. •Two DTC614T chips in a SMT package. |
| 描述与应用 |
特点 •双数字晶体管 •低饱和电压，通常VCE（sat）的IC / IB=40mV在=50毫安/2.5毫安，使得这些晶体管的理想选择静音电路。 •这些晶体管可用于大电流的水平，IC =600毫安。 •两个DTC614T的芯片在SMT包装。 |