| 最大源漏极电压Vds Drain-Source Voltage |
500V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±30V |
| 最大漏极电流Id Drain Current |
2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
2.9Ω~3.2Ω(VGS =10V,ID= 1A) |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
Vth =2.0 to 4.0 V (VDS=10V,ID =1mA) |
| 耗散功率Pd Power Dissipation |
|
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) . Switching Regulator and DC-DC Converter Applications. Motor Drive Applications . * Low drain-source ON-resistance: RDS (ON)= 2.9 Ω (typ.) * High forward transfer admittance: |Yfs| = 1.7 S (typ.) * Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) * Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS型（π-MOSV）。 开关稳压器和DC-DC转换器应用。 电机驱动应用。 *低漏源导通电阻RDS（ON）=2.9Ω（典型值） *较强的正向转移导纳：YFS| =1.7 S（典型值） *低漏电流IDSS=100μA（最大值）（VDS=500 V） *增强型号：VTH =2.0至4.0 V（VDS=10V，ID= 1毫安） |