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2SA1363 PNP transistors(BJT) -20V -2A 80MHz 150~300 -170mV/-0.17V SOT-89/SC-62 marking AE high HFE

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-16V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-170mV/-0.17V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & Applicationssilicon PNP epitaxial type high hFE; high collector current; small collector to emitter saturation voltage; high collector dissipation; small packing for mounting
描述与应用硅PNP外延型 HFE高; 高集电极电流; 小集电极到发射极饱和电压; 高集电极耗散; 小包装安装
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