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2SA1647-Z-T1 PNP transistors(BJT) -150V -5A 90MHz 150~300 -300mV/-0.3V TO-252/DPAK marking A1647 highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
90MHz
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
18W
Description & ApplicationsPNP silicon epitaxial transistor For high-speed switching FEATURES • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.4 µs MAX. (@IC = −3 A) • High DC current gain and excellent linearity
描述与应用PNP硅外延晶体管 对于高速切换 特点 •可用于高电流控制在小尺寸 Z型是一种无铅的加工产品,是用于安装一处理 混合IC。 •低集电极饱和电压: VCE(sat)=-0.3 V MAX。 (@ IC=-3 A) •开关速度快: TF=0.4μs最大。 (@ IC=-3 A) •高直流电流增益和良好的线性度
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