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2SA1806J-R PNP transistors(BJT) -15V -100mA/-0.1A 1.5GHz 90~150 -100mV/-0.1V SOT-523 marking AKR highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
1.5GHz
直流电流增益hFE
DC Current Gain(hFE)
90~150
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
125mW/0.125W
Description & ApplicationsSilicon PNP epitaxial planar type Features • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
描述与应用PNP硅外延平面型 特点 •高速开关 •低集电极 - 发射极饱和电压VCE(星期六) •SS-迷你型包装,让精简的设备和通过自动插入磁带包装
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