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2SA1836 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 300~600 -180mV/-0.18V SOT-523/SC-75 marking M7

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
300~600
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-180mV/-0.18V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications PNP SILICON EPITAXIAL TRANSISTOR FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted
描述与应用 PNP硅外延晶体管 特点 •高直流电流增益:HFE2=200 TYP。 •高电压:VCEO=-50 V •可自动安装
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