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2SA2018 PNP transistors(BJT) -15V -500mA/-0.5A 260MHz 270~680 -250mV/-0.25V SOT-523/EMT3 marking BW

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-12V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
260MHz
直流电流增益hFE
DC Current Gain(hFE)
270~680
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP Silicon epitaxial Transistor Low frequency transistor Applications For switching, for muting. Features collector current is large. Collector saturation voltage is low.
描述与应用PNP硅外延晶体管 低频晶体管 应用 对于开关,静音。 特点 集电极电流大。 集电极饱和电压低。
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