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2SA2071 PNP transistors（BJT） -60V -3A 180MHz 120~270 -500mV/-0.5V SOT-89/MPT marking UNQ Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar type Power transistor Features 1) High speed switching. 2) Low saturation voltage, 3) Strong discharge power for inductive load and capacitance load. 4) Complements to 2SC5824 Applications Low Frequency Amplifier High speed switching |
| 描述与应用 | PNP硅外延平面型 功率晶体管 特点 1）高速开关。 2）低饱和电压， 3）强大的放电功率为感性负载和容性负载。 4）补充型2SC5824 应用 低频放大器 高速开关 |
