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2SB1176(U)-0 PNP transistors（BJT） -130V -5A 30MHz 90~260 -500mV/-0.5V TO-252/DPAK marking B1176 low voltage switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -130V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | -5A |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 90~260 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 1.3W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-voltage switching Complementary to 2SD1746 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | PNP硅外延平面晶体管 对于低电压开关 互补2SD1746 特点 低集电极到发射极饱和电压VCE（SAT） 高速开关 I型包可以直接焊接在印刷电路板等小型电子设备的散热片。 |
