2SB1188-R PNP transistors（BJT） -40V -2A 100MHz 180~390 -800mV/-0.8V SOT-89/SC-62 marking BCR|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SB1188-R PNP transistors（BJT） -40V -2A 100MHz 180~390 -800mV/-0.8V SOT-89/SC-62 marking BCR

Model：2SB1188-R
Mark / screen / code / typing：BCR
Manufacturer：
Date Code：04+2RNOPB 05+NOPB
Package：SOT-89/SC-62/MPT
Standard Package：1000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−32V
集电极连续输出电流IC Collector Current(IC)	-2A
截止频率fT Transtion Frequency(fT)	100MHz
直流电流增益hFE DC Current Gain(hFE)	180~390
管压降VCE（sat） Collector-Emitter SaturationVoltage	−800mV/-0.8V
耗散功率Pc PoWer Dissipation	500mW/0.5W
Description & Applications	PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1766
描述与应用	PNP硅外延平面晶体管中等功率晶体管特点 1）低VCE（sat）的。 2）补充2SD1766

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