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2SB1197K PNP transistors(BJT) -40V -800mA/-0.8A 200MHz 180~390 -500mV/-0.5V SOT-23/SMT3 marking AHR

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
-800mA/-0.8A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications PNP Silicon epitaxial planar transistor Low Frequency Transistor Features 1) Low VCE(sat) 2) Complements to 2SD1781K
描述与应用 PNP硅外延平面晶体管 低频晶体管 特点 1)低VCE(SAT) 2)补充型2SD1781K
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