2SB1261-Z-E1 PNP transistors（BJT） -60V -3A 50MHz 100~400 -300mV/-0.3V TO-252/DPAK marking B1261 high HFE|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SB1261-Z-E1 PNP transistors（BJT） -60V -3A 50MHz 100~400 -300mV/-0.3V TO-252/DPAK marking B1261 high HFE

Model：2SB1261-Z-E1
Mark / screen / code / typing：B1261
Manufacturer：
Date Code：05+ 05+
Package：TO-252/DPAK
Standard Package：2000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−60V
集电极连续输出电流IC Collector Current(IC)	-3A
截止频率fT Transtion Frequency(fT)	50MHz
直流电流增益hFE DC Current Gain(hFE)	100~400
管压降VCE（sat） Collector-Emitter SaturationVoltage	-300mV/-0.3V
耗散功率Pc PoWer Dissipation	2W
Description & Applications	PNP Silicon epitaxial planar transistor High hFE Low VCE
描述与应用	PNP硅外延平面晶体管高HFE 低VCE

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