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2SB1261-Z-E1 PNP transistors（BJT） -60V -3A 50MHz 100~400 -300mV/-0.3V TO-252/DPAK marking B1261 high HFE
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor High hFE Low VCE |
| 描述与应用 | PNP硅外延平面晶体管 高HFE 低VCE |
