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2SB1386 PNP transistors(BJT) -30V -5A 120MHz 180~390 -1000mV/-1V SOT-89/MPT marking BHR

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Low Frequency Transistor Feature 1) Low VCE(sat). 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098
描述与应用PNP硅外延平面晶体管 低频晶体管 特点 1)低VCE(sat)的。 2)优秀DC电流增益特性。 3)补充2SD2098
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