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2SB1463-R PNP transistors(BJT) -150V -100mA/-0.1A 200MHz 130~220 -1000mV/-1V SOT-523 marking IR high breakdown voltage/low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−150V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
130~220
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
125mW/0.125W
Description & ApplicationsPNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD2240 Features High collector to emitter voltage VCEO. Low noise voltage NV SS-Mini type package
描述与应用PNP硅外延平面晶体管 对于高击穿电压低噪声放大 补充型2SD2240 特点 高集电极发射极电压VCEO。 低噪声电压NV SS-迷你型封装
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