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2SB792-S PNP transistors(BJT) -150V -50mA 200MHz 185~330 -1000mV/-1V SOT-23/SC-59 marking IS low noise

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−150V
集电极连续输出电流IC
Collector Current(IC)
-50mA
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
185~330
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsSilicon PNP epitaxial planer type Features ·High collector to emitter voltage VCEO. ·Low noise voltage NV. ·Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
描述与应用硅PNP外延刨床类型 特点 ·高集电极到发射极电压VCEO。 ·低噪声电压NV。 ·迷你型包装,让精简的设备和通过自动插入带包装盒包装
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