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2SB806 PNP transistors(BJT) -120V -700mA/-0.7A 75MHz 200~400 -400mV/-0.4V SOT-89/SC-62 marking KP high collector emitter voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-120V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
75MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
2W
Description & Applications PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007
描述与应用 PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007
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