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2SC2712-O NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 70~140 250mV/0.25V SOT-23/SC-59 marking LO radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
70~140
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors. Audio frequency general purpose amplifier applications. Features: High voltage and high current, Excellent hFE linearity ,High hFE ,Low noise ,Small package ,Complementary to 2SA1162.
描述与应用NPN硅外延晶体管, 音频通用放大器. 特点: 高电压和高电流, 优秀HFE线性, 高HFE, 低噪音, 小型封装, 互补2SA1162.
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