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2SC3356 NPN Transistors(BJT) 20V 100mA/0.1A 7GHz 125~250 10V SOT-23/SC-59 marking R25 microwave low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) |
7GHz |
| 直流电流增益hFE DC Current Gain(hFE) |
125~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
10V |
| 耗散功率Pc Power Dissipation |
200mW/0.2W |
| Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain • High power gain |
| 描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 说明 2SC3357 NPN硅外延晶体管设计的低噪声放大器在VHF，UHF和CATV频带。它具有大动态范围和良好的流动特性。 特点 •低噪声和高增益 •高功率增益 |
