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2SC3904 NPN Transistors(BJT) 15V 65mA 8.5Ghz 120 SOT-23/SC-59 marking 3SR for2GHz band low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
2.5V
集电极连续输出电流IC
Collector Current(IC)
65mA
截止频率fT
Transtion Frequency(fT)
8.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planer type For 2GHz band low-noise amplification High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
描述与应用NPN硅外延平面型 用于2GHz频段低噪声放大 高转换频率FT 迷你型包装,通过带盒封装允许缩减设备规模和自动插入
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