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2SC4100 NPN Transistors(BJT) 30V 50mA 1.1GHz 56~120 200mV/0.2V SOT-323/SC-70/UMT3 marking SN RF amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
19V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
1.1GHz
直流电流增益hFE
DC Current Gain(hFE)
56~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & Applications Epitaxial planar NPN Silicon transistor RF Amplifier High transition frequency Low output capacitance Low base resistance for high gain and excellent noise response
描述与应用 外延平面NPN硅晶体管 射频放大器 高转换频率 低输出电容 低基极电阻和良好的噪声响应
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