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2SC5703 NPN Transistors(BJT) 100V 4A 400~1000 <120mV/0.12V SOT-23/SC-59 marking WA fast switch DC-DCswitch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
4A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
400~1000
管压降VCE(sat)
Collector-Emitter Saturation Voltage
<120mV/0.12V
耗散功率Pc
Power Dissipation
800mW/0.8W
Description & ApplicationsTransistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)
描述与应用晶体管的硅NPN外延型 高速开关应用 DC-DC转换器应用 频闪应用 •高直流电流增益:HFE=400〜1000(IC= 0.5 A) •低集电极 - 发射极饱和电压VCE(饱和)= 0.12 V(最大值) •高速开关:TF =55 ns
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