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2SD1030-S NPN Transistors(BJT) 50V 50mA 120MHz 600~1200 50mV SOT-23/SC-59 marking 1ZS low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
600~1200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
50mV
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planer type low-frequency amplification Features * High foward current transfer ratio hFE. * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO. * Low noise voltage NV. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
描述与应用NPN硅外延平面型  低频放大  特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE(SAT) *高发射器基极电压VEBO。 *低噪声电压NV。 *迷你型包装,使瘦身的设备和 通过自动插入磁带包装和杂志 包装。
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