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2SD1782K NPN Transistors(BJT) 80V 500mA/0.5A 180MHz 120~270 200mV/0.2V SOT-23/SC-59/SMT3 marking AJQ

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)		80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)		80V
集电极连续输出电流IC
Collector Current(IC)		500mA/0.5A
截止频率fT
Transtion Frequency(fT)		180MHz
直流电流增益hFE
DC Current Gain(hFE)		120~270
管压降VCE（sat）
Collector-Emitter Saturation Voltage		200mV/0.2V
耗散功率Pc
Power Dissipation		200mW/0.2W
Description & ApplicationsFeatures * Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) * High VCEO, VCEO = 80V Structure Epitaxial planar type NPN silicon transistor
描述与应用特点 *低VCE（sat）的。 VCE（饱和）=0.2V （IC / IB= 0.5A/50MA） *高VCEO VCEO=80V 结构 外延平面型 NPN硅晶体管
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