2SD2318 NPN Transistors(BJT) 80V 3A 50MHz 560 ~1800 1V TO-252/CPT3 marking D2318U high current gain power|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SD2318 NPN Transistors(BJT) 80V 3A 50MHz 560 ~1800 1V TO-252/CPT3 marking D2318U high current gain power

Model：2SD2318
Mark / screen / code / typing：D2318U
Manufacturer：
Date Code：05+
Package：TO-252/CPT3
Standard Package：2500
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	80V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	60V
集电极连续输出电流IC Collector Current(IC)	3A
截止频率fT Transtion Frequency(fT)	50MHz
直流电流增益hFE DC Current Gain(hFE)	560 ~1800
管压降VCE（sat） Collector-Emitter Saturation Voltage	1V
耗散功率Pc Power Dissipation	1W
Description & Applications	High-current gain Power Transistor(60V, 3A) Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639.
描述与应用	高电流增益功率晶体管（60V，3A）特点 1）高DC电流增益。 2）低饱和电压。（VCE（sat）的典型值= 0.5V IC / IB=2A/0.5A） 3）补充2SB1639。

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