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2SD596 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 700mA/0.7A ft=170MHz HFE=200~320 Vce=220mV/0.22V SOT-23/SC-59 marking DV4

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
700mA/0.7A
截止频率fT
Transtion Frequency(fT)
170MHz
直流电流增益hFE
DC Current Gain(hFE)
200~320
管压降VCE(sat)
Collector-Emitter Saturation Voltage
220mV/0.22V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications micro package; high DC current gain,hFE:200
描述与应用 微封装; 高直流增益,HFE:200
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