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2SJ557 MOSFET P-Channel -30V 2.5A 0.114ohm SOT-23 marking XB high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-20V
最大漏极电流Id
Drain Current		-2.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.114Ω @-1A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.0--2.5V
耗散功率Pd
Power Dissipation		1.25W
Description & ApplicationsFEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
描述与应用•可驱动4 V的电源 •低通态电阻 的RDS（on）1 =155mΩ最大。 （VGS=-10V，ID=-1.0 A） 的RDS（on）=255mΩ最大。 （VGS= -4.5 V，ID=-1.0 A） 的RDS（on）3 =290mΩ最大。 （VGS= -4.0 V，ID=-1.0 A）
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