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2SJ576APTL-E MOSFET P-Channel -30V 100mA/0.1A 0.28ohm SOT-323 marking AP low on-resistance ultra high-speed switch 4V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.28Ω @-50mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.3--2.3V
耗散功率Pd
Power Dissipation		300mW/0.3W
Description & ApplicationsFeatures •Low on-resistance RDS=2.8 Ω typ. (VGS = -10 V , ID = -50 mA)RDS=5.7 Ω typ. (VGS = -4 V , ID = -50 mA) •4 V gate drive device. •Small package (CMPAK)
描述与应用•低导通电阻 RDS=2.8Ω（典型值）。 （VGS= -10V， ID= -50毫安）RDS=5.7Ω（典型值）（VGS=-4 V，ID=-50毫安） •4 V栅极驱动装置。 •采用小型封装（CMPAK），
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