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2SJ610 MOSFET P-Channel -250V -2A 1.85ohm SOT-252 marking J610 low on-resistance high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.85Ω @-10A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | Features •Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) •High forward transfer admittance: Yfs = 1.8 S (typ.) • Low leakage current: IDSS = −100 µA (VDS = −250 V) • Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 | •低漏源导通电阻RDS（ON）= 1.85Ω（典型值） •高正向转移导纳：的YFS=1.8 S（典型值） •低漏电流：IDSS=-100μA（VDS=-250 V） •增强模式：VTH=-1.5〜-3.5 V（VDS=10V，ID=1毫安） |
