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2SJ625 MOSFET P-Channel -20V 3A 0.09ohm SOT-23 marking XM low on-resistance high-speed switch 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.09Ω @-1.5A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45--1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
描述与应用•1.8 V可驱动 •低通态电阻 的RDS(on)= 54mΩ最大。 (VGS= -4.5 V,ID=-2.5 A) 的RDS(on)=71mΩ最大。 (VGS= -2.5 V,ID=-2.5 A) 的RDS(on)3 =108mΩ最大。 (VGS=-1.8 V,ID=-1.5“)
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